Stacked Half-Bridge Package

ABSTRACT

According to an exemplary embodiment, a stacked half-bridge package includes a control transistor having a control drain for connection to a high voltage input, a control source coupled to an output terminal, and a control gate for being driven by a driver IC. The stacked half-bridge package also includes a sync transistor having a sync drain for connection to the output terminal, a sync source coupled to a low voltage input, and a sync gate for being driven by the driver IC. A current carrying layer is situated on the sync drain; the control transistor and the sync transistor being stacked on one another, where the current carrying layer provides a high current connection between the sync drain and the control source.

The present application claims the benefit of and priority to a pending provisional application titled “Stacked Packaging Architecture with Reduced Form Factor and Increased Current Density with Application to Power Transistor Packaging,” Ser. No. 61/461,110 filed on Jan. 14, 2011. The disclosure in that pending provisional application is hereby incorporated fully by reference into the present application.

Moreover, application Ser. No. 11/986,848, filed on Nov. 27, 2007, titled “DC/DC Converter Including a Depletion Mode Power Switch,” now U.S. Pat. No. 7,902,809; and pending applications Ser. No. 12/928,102, filed on Dec. 3, 2010, titled “DC/DC Converter with Depletion-Mode III-Nitride Switches,” and Ser. No. 12/927,341, filed on Nov. 12, 2010, titled “Semiconductor Package with Metal Straps,” are hereby incorporated fully by reference into the present application.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to semiconductor devices. More particularly, the present invention relates to packaging of semiconductor devices.

2. Background Art

To allow for high efficiency power conversion, power converters, such as buck converters, commonly employ power switching circuits in which a high side power transistor and a low side power transistor are connected to form a half-bridge. One such power converter that is frequently employed is a synchronous buck converter, where the high side transistor is a control transistor and the low side transistor is a synchronous transistor. The control transistor and the synchronous transistor are typically formed on their respective separate dies, i.e. a control transistor die and a synchronous transistor die, that are connected in a package (i.e. co-packaged) to form the half bridge.

One approach to connecting the control transistor and the synchronous transistor in a package would be to arrange the control transistor and the synchronous transistor side by side on a substrate, such as a printed circuit board (PCB). However, this arrangement would result in the package having a large footprint, as the package must be large enough to accommodate footprints of the control transistor and the synchronous transistor. Furthermore, conductive traces on the PCB could be used to connect the control transistor and the synchronous transistor so as to form the half-bridge. However, the conductive traces would form long routing paths on the PCB, causing high parasitic inductance and resistance. Thus, this approach to packaging the control transistor and the synchronous transistor would result in a package having a large form factor where the package significantly degrades performance of the half bridge.

What is needed is an approach to packaging control and synchronous transistors that is capable of achieving packages having a small form factor where the packages do not significantly degrade performance of the half-bridge.

SUMMARY OF THE INVENTION

A stacked half-bridge package with a current carrying layer, substantially as shown in and/or described in connection with at least one of the figures, and as set forth more completely in the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows an exemplary circuit schematic of a synchronous buck converter, according to one embodiment of the invention.

FIG. 2A illustrates a selective top view of a stacked half-bridge package, according to one embodiment of the invention.

FIG. 2B illustrates a selective top view of a stacked half-bridge package, according to one embodiment of the invention.

FIG. 2C illustrates a selective top view of a stacked half-bridge package, according to one embodiment of the invention.

FIG. 2D illustrates a cross sectional view of a portion of a stacked half-bridge package, according to one embodiment of the invention.

DETAILED DESCRIPTION OF THE INVENTION

The present application is directed to a stacked half-bridge package with a current carrying layer. The following description contains specific information pertaining to the implementation of the present invention. One skilled in the art will recognize that the present invention may be implemented in a manner different from that specifically discussed in the present application. Moreover, some of the specific details of the invention are not discussed in order not to obscure the invention. The specific details not described in the present application are within the knowledge of a person of ordinary skill in the art.

The drawings in the present application and their accompanying detailed description are directed to merely exemplary embodiments of the invention. To maintain brevity, other embodiments of the invention, which use the principles of the present invention, are not specifically described in the present application and are not specifically illustrated by the present drawings.

FIG. 1 shows an exemplary circuit schematic of synchronous buck converter 100 including half-bridge 102, which is formed in a stacked half-bridge package 102, according to an embodiment of the invention, and is thus also referred to as “stack half-bridge package” 102 or “half-bridge package” 102 in the present application. Synchronous buck converter 100 also includes, driver integrated circuit (IC) 104, output inductor 106, and output capacitor 108.

Half-bridge 102 includes control transistor Q₁ and synchronous transistor Q₂ (also referred to as “sync transistor”), high voltage input terminal V_(H), low voltage input terminal V_(L), output terminal V_(OUT), control gate terminal V_(G1), and sync gate terminal V_(G2).

In half-bridge 102, high voltage input terminal V_(H) receives high voltage input V_(HI), which can be, for example, a direct current (DC) voltage. Low voltage input terminal V_(L) receives low voltage input V_(LI), which can be, for example, ground. Also in half-bridge 102, control gate terminal V_(G1) receives a control gate signal from driver IC 104 for driving control transistor Q₁. Similarly, sync gate terminal V_(G2) receives a sync gate signal from driver IC 104 for driving sync transistor Q₂. Driver IC 104 may drive control transistor Q₁ and sync transistor Q₂ utilizing any suitable method. As a specific example, in one embodiment, driver IC 104 can vary a duty cycle of the sync and control gate signals responsive to a measurement of output voltage V_(O) of synchronous buck converter 100 to maintain a desired output voltage V_(O), regardless of changes in high voltage input V_(HI). It will be appreciated that in other embodiments, output voltage V_(O) is not measured in synchronous buck converter 100.

Control transistor Q₁ includes control source S₁, control drain D₁, and control gate G₁. Sync transistor Q₂ includes sync source S₂, sync drain D₂, and sync gate G₂. In various embodiments of the present invention, control transistor Q₁ and sync transistor Q₂ can be any combination of an enhancement more transistor and a depletion mode transistor. For example, in one embodiment, control transistor Q₁ and sync transistor Q₂ are both depletion mode transistors. Control transistor Q₁ and sync transistor Q₂ can be P-channel or N-channel transistors. Also, control transistor Q₁ and sync transistor Q₂ can be field-effect transistors (FETs). In one embodiment, at least one of control transistor Q₁ and sync transistor Q₂ is a silicon FET. However, at least one of control transistor Q₁ and sync transistor Q₂ may also comprise a non-silicon FET or any other FET in general. In one embodiment, at least one of control transistor Q₁ and sync transistor Q₂ is a metal-oxide-semiconductor field-effect transistor (MOSFET). At least one of control transistor Q₁ and sync transistor Q₂ can also be, as an example, a high electron mobility transistor (HEMT), such as a GaN HEMT.

Control transistor Q₁ has control drain D₁ for connection to high voltage input V_(HI) through high voltage input terminal V_(H) of half-bridge 102. Control transistor Q₁ also has control source S₁ coupled to output terminal V_(OUT) of half-bridge 102. Also, control transistor Q₁ has control gate G₁ coupled to control gate terminal V_(G1) of half-bridge 102 for being driven by driver IC 104.

Sync transistor Q₂ has sync drain D₂ for connection to output terminal V_(OUT) of half-bridge 102. Sync transistor Q₂ also has sync source S₂ coupled to low voltage input V_(LI) through low voltage input terminal V_(L) of half-bridge 102. Also, sync transistor Q₂ has sync gate G₂ coupled to sync gate terminal V_(G2) of half-bridge 102 for being driven by driver IC 104.

In some embodiments, at least one of control transistor Q₁ and sync transistor Q₂ can be connected to a diode. For example, FIG. 1 shows optional diodes 110 and 112. In the embodiment shown in FIG. 1, diode 110 is coupled to control source S₁ and control drain D₁, such that diode 110 is in parallel with control transistor Q₁. Similarly, diode 112 is coupled to sync source S₂ and sync drain D₂, such that diode 112 is in parallel with control transistor Q₂. In some embodiments, at least one of diodes 110 and 112 can be connected with a reverse polarity to that shown in FIG. 1. In various embodiments, diodes 110 and 112 can be internal to or external to control transistor Q₁ and sync transistor Q₂. As an example, in one embodiment, control transistor Q₁ and sync transistor Q₂ are MOSFETs and diodes 110 and 112 are respective body diodes of control transistor Q₁ and sync transistor Q₂.

Control transistor Q₁ and sync transistor Q₂ are commonly included on respective dies (i.e. a control transistor die and a synchronous transistor die). The respective dies may include other components, for example, diode 110 may be on the control transistor die and diode 112 may be on the synchronous transistor die. These other components may also be provided external to the respective dies and can be, for example, on a different die.

Synchronous buck converter 100 illustrates one power converter, which can benefit from including stacked half-bridge package 102, in accordance with embodiments of the present invention. However, half-bridge 102 is not limited to being included in a synchronous buck converter and can be included in other types of power converters.

In accordance with embodiments of the present invention, control transistor Q₁ and sync transistor Q₂ can be connected in a stacked half-bridge package, which includes stacked half-bridge package 102, while achieving a small footprint with low parasitic inductance and resistance. Thus, the stacked half-bridge package can have a small form factor where the stacked half-bridge package does not significantly degrade performance of half-bridge 102.

FIGS. 2A-2C illustrate selective top views of stacked half-bridge package 202, corresponding to stacked half-bridge package 102 in FIG. 1, in accordance with one embodiment of the present invention. Various features of stacked half-bridge package 202 are not shown in FIGS. 2A-2C for clarity of description. FIG. 2D illustrates a cross sectional view of a portion of stacked half-bridge package 202, according to one embodiment of the invention. The cross sectional view shown in FIG. 2D corresponds to a cross section along line 2D-2D in FIGS. 2A-2C.

FIG. 2A shows control drain leadframe 220, sync source leadframe 222, control gate leadframe 224, sync gate leadframe 226, output terminal leadframe 228, support leadframe 230, and control transistor Q₁ of stacked half-bridge package 202.

Control transistor Q₁ in FIGS. 2A-2D corresponds to control transistor Q₁ in FIG. 1. Control transistor Q₁ is over control drain leadframe 220 and includes control source S₁, control drain D₁, and control gate G₁. Control source S₁ in stacked half-bridge package 202 corresponds to control source S₁ in FIG. 1, control gate G₁ in stacked half-bridge package 202 corresponds to control gate G₁ in FIG. 1, and control drain D₁ in stacked half-bridge package 202 corresponds to control drain D₁ in FIG. 1. In the present embodiment, control transistor Q₁ has top and bottom surfaces, which are opposite one another. Control drain D₁ is on the bottom surface and control source S₁ and control gate G₁ are on the top surface.

FIG. 2A shows control source S₁ and control gate G₁ are on the top surface of control transistor Q₁, and indicates control drain D₁ on the bottom surface thereof. In the present embodiment, control drain D₁ is provided with a control drain pad that substantially covers an entirety of the bottom surface of control transistor Q₁. Control source S₁ is provided with a plurality of control source pads 234 a and 234 b (also referred to collectively as “control source pads 234”). Also, control gate G₁ is provided with a gate pad.

It is noted that in some embodiments, control drain D₁, control source S₁, and control gate G₁ are not provided as shown in stacked half-bridge package 202. For example, control drain D₁, control source S₁, and control gate G₁ can be provided on different surfaces of control transistor Q₁ and can be provided using one or more pads arranged in any suitable manner. As one example, in some embodiments, a single control source pad can replace control source pads 234.

Control drain leadframe 220, sync source leadframe 222, control gate leadframe 224, sync gate leadframe 226, output terminal leadframe 228, and support leadframe 230 are electrically conductive and can comprise, for example, an easily solderable metal such as aluminum, and other solderable materials such as a metal alloy or a tri-metal. Control transistor Q₁ is over control drain leadframe 220, which provides mechanical and electrical connection for control drain D₁. In the present embodiment, control drain leadframe 220 of stacked half-bridge package 202 corresponds to high voltage input terminal V_(H) in FIG. 1.

Also in the present embodiment, at least one control gate bondwire, such as control gate bondwires 218, provides electrical and mechanical connection for control gate G₁. Control gate bondwires 218 provide electrical connection between control gate G₁ and control gate leadframe 224. In the present embodiment, control gate leadframe 224 of stacked half-bridge package 202 corresponds to control gate terminal V_(G1) in FIG. 1. It is noted that some embodiments do not include control gate leadframe 224. Furthermore, in various embodiments, something other than at least one control gate bondwire (e.g. a conductive gate clip) can provide electrical and mechanical connection for control gate G₁.

FIG. 2B is similar to FIG. 2A, with an addition of showing sync transistor Q₂ of stacked half-bridge package 202 over control drain leadframe 220 and control transistor Q₁. In the present embodiment, sync transistor Q₂ is on support leadframe 230, which acts as a mechanical support for sync transistor Q₂. In some embodiments, support leadframe 230 is not electrically conductive. Furthermore, it will be appreciated that support leadframe 230 is not required in stacked half-bridge package 202.

Sync transistor Q₂ in stacked half-bridge package 202 corresponds to sync transistor Q₂ in FIG. 1. Sync source S₂ in stacked half-bridge package 202 corresponds to sync source S₂ in FIG. 1, sync gate G₂ in stacked half-bridge package 202 corresponds to sync gate G₂ in FIG. 1, and sync drain D₂ in stacked half-bridge package 202 corresponds to sync drain D₂ in FIG. 1. In the present embodiment, sync transistor Q₂ has top and bottom surfaces, which are opposite one another. Sync drain D₂ is on the bottom surface and sync source S₂ and sync gate G₂ are on the top surface.

FIG. 2B shows sync source 5 ₂ and sync gate G₂ are on the top surface of sync transistor Q₂, and indicates sync drain D₂ on the bottom surface thereof. In the present embodiment, sync drain D₂ is provided with a sync drain pad that substantially covers an entirety of the bottom surface of sync transistor Q₂. Sync source S₂ is provided with a plurality of control source pads 236 a, 236 b, 236 c, 236 d, and 236 e (also referred to collectively as “sync source pads 236”). Also, sync gate G₂ is provided with a gate pad.

It is noted that in some embodiments, sync drain D₂, sync source S₂, and sync gate G₂ are not provided as shown in stacked half-bridge package 202. For example, sync drain D₂, sync source S₂, and sync gate G₂ can be provided on different surfaces of sync transistor Q₂ and can be provided using one or more pads arranged in any suitable manner. As one example, in some embodiments, a single sync source pad can replace sync source pads 236.

Referring to FIG. 2D, FIG. 2D shows current carrying layer 232 (not visible in FIGS. 2A, 2B, and 2C) situated on sync drain D₂ with control and sync transistors Q₁ and Q₂ being stacked on one another, where current carrying layer 232 provides a high current connection between sync drain D₂ and control source S₁. If control and sync transistors Q₁ and Q₂ were stacked upon one another without current carrying layer 232, a current connection between sync drain D₂ and control source S₁ would not be sufficient for half-bridge package 202. However, current carrying layer 232 allows for a sufficient current connection between sync drain D₂ and control source S₁, while achieving a short current path between control source S₁ and sync drain D₂ that has low parasitic inductance and resistance. As such, stacked half-bridge package 202 does not significantly degrade performance of half-bridge 102 in FIG. 1. Furthermore, stacked half-bridge package 202 has a small footprint that does not incorporate footprints of control transistor Q₁ and sync transistor Q₂ individually, thereby allowing for a small form factor.

In the present embodiment, current carrying layer 232 is planar and is formed on synchronous transistor Q₂ during manufacture. Thus, current carrying layer 232 can be of a smaller thickness than is readily achievable otherwise. By way of example, half-bridge package 202 may otherwise require a connection means having a thickness of at least approximately 300 microns. However, in the present embodiment, current carrying layer 232 can be of a thickness that is less than approximately 300 microns. For example, in one embodiment, current carrying layer 232 is of a thickness that is less than approximately 10 microns. In one specific embodiment, current carrying layer 232 is of a thickness between approximately 4 microns and approximately 8 microns. As such, current carrying layer 232 can achieve a high current connection between sync drain D₂ and control source S₁ that has lower parasitic inductance and resistance than is readily achievable otherwise.

Current carrying layer 232 comprises conductive material, such as a metal or metal alloy. In one embodiment, current carrying layer 232 is a copper layer. In another embodiment, current carrying layer 232 is an aluminum layer. In the present embodiment, half-bridge package 202 also includes solderable front metal (SFM) 250 situated on current carrying layer 232. SFM 250 comprises a solderable material, such as silver that is formed on current carrying layer 232 during manufacture of synchronous transistor Q₂ and allows for convenient connection between control source S₁ and sync drain D₂.

In the present embodiment, current carrying layer 232 is over output terminal leadframe 228, which provides mechanical and electrical connection for current carrying layer 232. In the present embodiment, output terminal leadframe 228 of stacked half-bridge package 202 corresponds to output terminal V_(OUT) in FIG. 1.

Also in the present embodiment, at least one sync gate bondwire, such as sync gate bondwires 238, provides electrical and mechanical connection for sync gate G₂. Sync gate bondwires 238 provide electrical connection between sync gate G₂ and sync gate leadframe 226. In the present embodiment, sync gate leadframe 226 of stacked half-bridge package 202 corresponds to sync gate terminal V_(G2) in FIG. 1. It is noted that some embodiments do not include sync gate leadframe 226. Furthermore, in various embodiments, something other than at least one sync gate bondwire (e.g. a conductive gate clip) can provide electrical and mechanical connection for sync gate G₂.

FIG. 2C is similar to FIG. 2B, with an addition of showing conductive source clip 240 of stacked half-bridge package 202 over sync transistor Q₂, control transistor Q₁, and control drain leadframe 220. Conductive source clip 240 comprises conductive material, such as a metal or metal alloy. In one embodiment conductive source clip 240 is a copper clip. Conductive source clip 240 includes source clip web 240 a and source clip leg 240 b and provides connection between sync source S₂ and sync source leadframe 222. In FIG. 2G, a dashed line indicates a boundary of source clip web 240 a and source clip leg 240 b. In the present embodiment, sync source leadframe 222 corresponds to low voltage input terminal V_(L) in FIG. 1 with source clip leg portion 240 b being over and electrically and mechanically connected to sync source leadframe 222 and source clip web 240 a being over and electrically and mechanically connected to sync source S₂ of sync transistor Q₂.

As noted above, FIG. 2D illustrates a cross sectional view of a portion of stacked half-bridge package 202 corresponding to a cross section along line 2D-2D in FIGS. 2A-2C. However, some features which are not in the cross section along line 2D-2D in FIGS. 2A-2C are included in FIG. 2D for completeness and are indicated using dashed lines. Those features are control gate bondwires 218, control gate leadframe 224, sync gate bondwires 238, and sync gate leadframe 226. Sync gate bondwires 238 are electrically connected to gate G₂ of sync transistor Q₂, which is behind and not shown in FIG. 2D.

FIG. 2D shows that conductive source clip 240 is connected to sync source S₂ at topside 246 a of stacked half-bridge package 202 and shows control drain leadframe 220, sync source leadframe 222, control gate leadframe 224, sync gate leadframe 226, and output terminal leadframe 228 at bottomside 246 b of stacked half-bridge package 202. In one embodiment, hermetic sealant, such as a molding compound, can encapsulate stacked half-bridge package 202 (not shown in FIG. 2D). However, control drain leadframe 220, sync source leadframe 222, control gate leadframe 224, sync gate leadframe 226, and output terminal leadframe 228 are exposed on bottomside 246 b of stacked half-bridge package 202 and thus, available for electrical connection.

FIG. 2D shows that output terminal leadframe 228 is of thickness 242 that is greater than that of control drain leadframe 220 and control transistor Q₁ combined. FIG. 2D also shows source clip leg 240 b of conductive source clip 240 is of thickness 248 that is greater than that of sync transistor Q₂ and current carrying layer 232 combined. In some embodiment, thickness 248 can be greater than that of sync transistor Q₂, current carrying layer 232, and control transistor Q₁. For example, thickness 248 can be equal to thickness 244 of control drain leadframe 220.

In the present embodiment, respective bottom surfaces of control drain leadframe 220, sync source leadframe 222, control gate leadframe 224, sync gate leadframe 226, and output terminal leadframe 228 are substantially flush with one another, as shown in FIG. 2D. As such, stacked half-bridge package 202 can easily be mounted on and electrically connected to a substrate (not shown in FIGS. 2A-2D). Furthermore, control drain leadframe 220, control gate leadframe 224, and sync gate leadframe 226 can all be of thickness 244. In one embodiment, drain leadframe 220, sync source leadframe 222, control gate leadframe 224, sync gate leadframe 226, and output terminal leadframe 228 are formed from a shared leadframe. Drain leadframe 220, control gate leadframe 224, and sync gate leadframe 226 can be formed by half-etching the shared leadframe.

Thus, as described above with respect to FIGS. 1 and 2A-2D, embodiments of the present invention can provide for a stacked half-bridge package including a control transistor and a sync transistor. The control transistor and the sync transistor can advantageously be connected in a half-bridge with low parasitic inductance and resistance. Furthermore, the control transistor and the sync transistor can be connected with the stacked half-bridge package having a small footprint. As such, among other advantages not specifically described herein, the stacked half-bridge package can have a small form factor, where the stacked half-bridge package does not significantly degrade performance of the half-bridge.

From the above description of the invention it is manifest that various techniques can be used for implementing the concepts of the present invention without departing from its scope. Moreover, while the invention has been described with specific reference to certain embodiments, a person of ordinary skills in the art would recognize that changes can be made in form and detail without departing from the spirit and the scope of the invention. As such, the described embodiments are to be considered in all respects as illustrative and not restrictive. It should also be understood that the invention is not limited to the particular embodiments described herein, but is capable of many rearrangements, modifications, and substitutions without departing from the scope of the invention. 

1-20. (canceled)
 21. A stacked half-bridge package comprising: a control transistor having a control drain for connection to a high voltage input, a control source coupled to an output terminal, and a control gate; a sync transistor having a sync drain for connection to said output terminal, a sync source coupled to a low voltage input, and a sync gate; said control and sync transistors being stacked over one another, wherein a current carrying layer provides an electrical connection between said sync drain and said control source.
 22. The stacked half-bridge package of claim 21, wherein an output terminal leadframe provides connection for said current carrying layer.
 23. The stacked half-bridge package of claim 21, comprising a solderable front metal (SFM) situated on said current carrying layer.
 24. The stacked half-bridge package of claim 21, wherein a control drain leadframe provides connection for said control drain.
 25. The stacked half-bridge package of claim 21, wherein a conductive source clip provides connection between said sync source and a sync source leadframe.
 26. The stacked half-bridge package of claim 21, wherein a conductive source clip comprises a source clip leg that is of a thickness greater than that of said sync transistor.
 27. The stacked half-bridge package of claim 21, wherein a conductive source clip comprises a source clip leg that is of a thickness greater than a combined thickness of said sync transistor and said current carrying layer.
 28. The stacked half-bridge package of claim 21, wherein a conductive source clip comprises a source clip web that is connected to said sync source and including a source clip leg that is connected to a sync source leadframe.
 29. The stacked half-bridge package of claim 21, wherein a conductive source clip is connected to said sync source at a topside of said stacked half-bridge package.
 30. The stacked half-bridge package of claim 21, wherein respective bottom surfaces of a sync source leadframe, a control drain leadframe, and an output terminal leadframe are substantially flush with one another.
 31. The stacked half-bridge package of claim 21, wherein at least one control gate bondwire provides electrical connection for said control gate.
 32. The stacked half-bridge package of claim 21, wherein at least one control gate bondwire provides electrical connection between said control gate and a control gate leadframe.
 33. The stacked half-bridge package of claim 21, wherein at least one sync gate bondwire provides electrical connection for said sync gate.
 34. The stacked half-bridge package of claim 21, wherein at least one sync gate bondwire provides electrical connection between said sync gate and a sync gate leadframe.
 35. The stacked half-bridge package of claim 21, wherein said sync source comprises a plurality of sync source pads.
 36. The stacked half-bridge package of claim 21, wherein said control transistor has top and bottom surfaces, said control drain being on said bottom surface and said control source and said control gate being on said top surface.
 37. The stacked half-bridge package of claim 21, wherein said sync transistor has top and bottom surfaces, said sync drain being on said bottom surface and said sync source and said sync gate being on said top surface.
 38. The stacked half-bridge package of claim 21, wherein respective bottom surfaces of a sync source leadframe, a control drain leadframe, a sync gate leadframe, a control gate leadframe, and an output terminal leadframe are substantially flush with one another.
 39. The stacked half-bridge package of claim 21, further comprising an output terminal leadframe that is of a thickness greater than that of a control drain leadframe.
 40. The stacked half-bridge package of claim 21, further comprising an output terminal leadframe that is of a thickness greater than a combined thickness of a control drain leadframe and said control transistor. 